IAUT300N08S5N012ATMA2 vs BSC076N06NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUT300N08S5N012ATMA2 disebabkan oleh Infineon dan BSC076N06NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUT300N08S5N012ATMA2 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V OptiMOS 3
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55C to +150C
Kemasan PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1 (unlimited)
Technology — N-Channel Trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Boson Bebas — Yes (per Infineon product page)

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