IAUZ40N08S5N100ATMA1 vs IAUZ40N10S5N130ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N08S5N100ATMA1 disebabkan oleh Infineon dan IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ40N08S5N100ATMA1 IAUZ40N10S5N130ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS-5 N-Channel MOSFET OptiMOS 5 (super-junction trench)
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID, Tc=25°C) 40 A —
Power Dissipation (PD, Tc=25°C) 68 W —
On-Resistance RDS(on) max 10 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg typ 24.2 nC @ VGS=10 V —
Input Capacitance Ciss 1591 pF @ VDS=40 V —
Gate-Source Voltage VGS max ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C (TJ)
Kemasan PG-TDSON-8 (S3O8) 3.3 × 3.3 mm PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Status RoHS Compliant —
Channel Type N-Channel —
Manufacturer — Infineon Technologies
Part Number — IAUZ40N10S5N130ATMA1
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 40 A
Pulsed Drain Current (IDM) — 160 A
RDS(on) max at VGS=10V — 13 mΩ
RDS(on) typical — 10 mΩ
Maximum Power Dissipation (Tc) — 68 W
Lead-Free / RoHS — ROHS3 Compliant

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