IAUZ40N10S5N130ATMA1 vs IAUZ30N08S5N186ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon dan IAUZ30N08S5N186ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ40N10S5N130ATMA1 IAUZ30N08S5N186ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IAUZ40N10S5N130ATMA1 —
Technology OptiMOS 5 (super-junction trench) OptiMOS 5 N-Channel Power MOSFET (trench)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID) at Tc=25°C 40 A —
Pulsed Drain Current (IDM) 160 A —
RDS(on) max at VGS=10V 13 mΩ —
RDS(on) typical 10 mΩ —
Maximum Power Dissipation (Tc) 68 W —
Kemasan PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm PG-TSDSON-8-32 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55 °C to +175 °C (automotive)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Lead-Free / RoHS ROHS3 Compliant —
Continuous Drain Current (ID, Tj) — 30 A
Power Dissipation (PD, Tc) — 41 W
On-State Resistance (RDS(on)) — 18.6 mΩ (typical, VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Aras MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga