IAUZN04S7L030ATMA1 vs IAUC60N04S6N031HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN04S7L030ATMA1 disebabkan oleh Infineon dan IAUC60N04S6N031HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZN04S7L030ATMA1 IAUC60N04S6N031HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Kemasan PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-56 (5 mm x 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Manufacturer — Infineon Technologies
Part Family — IAUC (Integrated Automotive Half-Bridge)
Process Technology — OptiMOS 6 40V
Configuration — Half-Bridge (2 N-Channel MOSFETs)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tj) — 60 A
Power Dissipation (P_D, Tc=25C) — 75 W
R_DS(on) at VGS=10V — 3.1 mΩ
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gambaran Suhu Operasi — -55 °C to +175 °C (Tj)
Kiraan Pin — 8
Status RoHS — Compliant

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