IGD06N60TATMA1 vs IKD10N60RC2ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGD06N60TATMA1 disebabkan oleh Infineon dan IKD10N60RC2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGD06N60TATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Transistors | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 12 A | — |
| Continuous Collector Current (IC) at TC=100°C | 6 A | — |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | — |
| Maximum Power Dissipation (Ptot) | 88 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V | — |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) | — |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | — |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | Yes - reverse-conducting 2-diode co-packed |
| Suhu Hubungan Operasi | -40 °C to +175 °C | — |
| Storage Temperature | -55 °C to +150 °C | — |
| Kemasan | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Collector-Emitter Voltage (V_CE) | — | 600 V |
| Continuous Collector Current (I_C nom) | — | 10 A |
| Pulsed Collector Current (I_Cp) | — | 18.8 A |
| Maximum Power Dissipation (P_tot) | — | 79 W |
| Technology | — | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Gambaran Suhu Operasi | — | -40 C to +175 C (junction) |
| Gate-Emitter Voltage (V_GE) | — | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | — | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | — | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | — | [DATA_NEEDED: t_sc rating] |
| Qualification | — | Industrial (qualified per Infineon product validation) |