IGD06N60TATMA1 vs IKD10N60RC2ATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IGD06N60TATMA1 tarafından Infineon ve IKD10N60RC2ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IGD06N60TATMA1 IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon

IGD06N60TATMA1 ✓ Aktif
Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IGD06N60TATMA1 IKD10N60RC2ATMA1
Marka Infineon Infineon
Kategori Transistors IGBTs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies —
Series TRENCHSTOP IGBT3 —
IGBT Type Trench Field Stop —
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25°C 12 A —
Continuous Collector Current (IC) at TC=100°C 6 A —
Maximum Pulsed Collector Current (ICM) 18 A (per datasheet) —
Maximum Power Dissipation (Ptot) 88 W —
Gate-Emitter Voltage (VGE) ±20 V —
VCE(sat) at IC=6A, VGE=15V, Tj=25°C 1.5 V (typical) —
Gate Threshold Voltage (VGE(th)) 3.0 V min / 5.0 V max (typical 4.0 V) —
Turn-on Switching Energy (Eon) [DATA_NEEDED: Eon] —
Turn-off Switching Energy (Eoff) [DATA_NEEDED: Eoff] —
Integrated Diode Yes, soft-recovery emitter-controlled diode Yes - reverse-conducting 2-diode co-packed
İşletim Jant Sıcaklığı -40 °C to +175 °C —
Storage Temperature -55 °C to +150 °C —
Paket PG-TO252-3-11 (DPAK / TO-252) PG-TO252-3 (DPAK, surface mount)
Montaj Türü Surface Mount Surface Mount
RoHS Durumu Compliant Compliant
Lead-Free Yes —
Collector-Emitter Voltage (V_CE) — 600 V
Continuous Collector Current (I_C nom) — 10 A
Pulsed Collector Current (I_Cp) — 18.8 A
Maximum Power Dissipation (P_tot) — 79 W
Technology — TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode)
İşletim Sıcaklığı Aralığı — -40 C to +175 C (junction)
Gate-Emitter Voltage (V_GE) — [DATA_NEEDED: recommended V_GE value]
V_CE(sat) at I_C — [DATA_NEEDED: typical V_CE(sat)]
Switching Frequency (typical) — 10 - 30 kHz (hard-switching)
Short-Circuit Withstand Time — [DATA_NEEDED: t_sc rating]
Qualification — Industrial (qualified per Infineon product validation)

Dökümanlar & Kaynaklar

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