IPB038N12N3GATMA1 vs IPB027N10N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB038N12N3GATMA1 disebabkan oleh Infineon dan IPB027N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB038N12N3GATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Kemasan / Case | PG-TO263-3 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Gate Drive | Logic-level compatible | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55°C to +175°C (TJ) |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Kemasan | — | PG-TO263-3 (D2PAK) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |