IPB35N10S3L26ATMA1 vs IPB35N10S3L26ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB35N10S3L26ATMA1 disebabkan oleh Infineon dan IPB35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB35N10S3L26ATMA2 IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon

IPB35N10S3L26ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T OptiMOS Power-Transistor
Channel Type N-Channel —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Power Dissipation (PD) at TC 71 W —
Package Type PG-TO263-3 (D2PAK-2) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Channel Mode Enhancement —
RDS(on) (typical per Infineon product page) 26.3 mΩ —
Typical Gate Charge Qg @ Vgs 80 nC —
Maximum Drain-Source Resistance Rds 1.7 mΩ (per RS Components listing) —
Minimum Operating Temperature -55 C —
Maximum Power Dissipation Pd 81 W (per RS Components listing) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tc — 35 A
Arus Alir Gesa — 180 A
Power Dissipation (Pd) at Tc — 71 W
RDS(on) (typical) — 26.3 mOhm
Kemasan — PG-TO263-3-2 (D2PAK)
Gambaran Suhu Operasi — -55C to +175C
Bilangan Pin — 3
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Automotive Qualified — Yes (per Infineon product page classification)

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