IPB60R280P7ATMA1 vs IPA60R180P7SXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R280P7ATMA1 disebabkan oleh Infineon dan IPA60R180P7SXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB60R280P7ATMA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0.88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Kiraan Pin | 3 (2 + Tab) | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (T_j max) | -55C to +150C (junction) |
| Configuration | Single N-Channel | Single |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Channel Type | — | N-Channel |