IPB70N10S3L12ATMA1 vs BSC0902NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB70N10S3L12ATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB70N10S3L12ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS (IPB70N10) —
Jenis Transistor N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Boson Bebas Yes Yes, per IEC 61249-2-21
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Gambaran Suhu Operasi — -55C to +150C (Tj)
Kemasan — PG-TDSON-8-6 (SuperSO8)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Avalanche Rated — Yes (100% avalanche tested)

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