IPB70N10S3L12ATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of IPB70N10S3L12ATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB70N10S3L12ATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $0.78
Manufacturer Infineon Technologies β€”
Series OptiMOS (IPB70N10) β€”
Transistor Type N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TC=25Β°C 70 A β€”
Peak Drain Current (IDM) 180 A β€”
On-Resistance RDS(on) max at VGS=10V 11.8 mΞ© β€”
Power Dissipation (PD) at TC=25Β°C 125 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified β€”
MSL (Moisture Sensitivity Level) MSL1 (up to 260 Β°C peak reflow) β€”
RoHS / Green RoHS Compliant, Green Product β€”
Avalanche Tested 100 % Avalanche Tested β€”
Halogen-Free Yes Yes, per IEC 61249-2-21
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Operating Temperature Range β€” -55C to +150C (Tj)
Package β€” PG-TDSON-8-6 (SuperSO8)
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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