IPD031N06L3GATMA1 vs IAUC120N06S5L032ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD031N06L3GATMA1 disebabkan oleh Infineon dan IAUC120N06S5L032ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD031N06L3GATMA1 IAUC120N06S5L032ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 Trench
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A —
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Gambaran Suhu Operasi -55°C to +175°C -55 C to +175 C (T_j)
Kemasan PG-TO252-3 (DPAK) PG-TDSON-8-34 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS 3 —
Aras MSL 1 (Unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 (60 V)
Jenis Transistor — N-Channel, Enhancement Mode
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, T_j) — 120 A
R_DS(on) Max (V_GS = 10 V) — 3.2 mOhm
Power Dissipation (P_D, T_C = 25 C) — 94 W
AEC-Q101 Qualified — Yes
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge Q_G — [DATA_NEEDED: Q_G total at V_GS=10V]

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