IPD031N06L3GATMA1 vs IAUC120N06S5L032ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N06L3GATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L032ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ NakahandaInfineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD031N06L3GATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 Trench |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | — |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55 C to +175 C (T_j) |
| Packhaging | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | — |
| Level ng MSL | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Uri ng Transistor | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |