IPD042P03L3GATMA1 vs IPD060N03LGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD042P03L3GATMA1 disebabkan oleh Infineon dan IPD060N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD042P03L3GATMA1 IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon

IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon

IPD042P03L3GATMA1 ✓ Aktif
Infineon
IPD060N03LGATMA1 IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 - 30V 50A OptiMOS N-Ch MOSFET | Infineon

IPD060N03LGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD042P03L3GATMA1 IPD060N03LGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID, Tc=25°C) -70 A —
Pulsed Drain Current (IDM) -280 A —
RDS(on) max @ VGS = -10 V 4.2 mΩ —
RDS(on) max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) @ -4.5 V] —
Gate Threshold Voltage (VGS(th)) -1.5 V (typ) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Total Power Dissipation (PD @ Tc=25°C) 150 W —
Single-Pulse Avalanche Energy (EAS) 290 mJ —
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Kemasan PG-TO252-3 (DPAK) —
Technology OptiMOS™ P (Trench) —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 1 (Unlimited)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 30V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 50 A
Pulsed Drain Current (IDM, TC=25C, tp<=10us) — 200 A
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th), typ) — 1.7 V
On-State Resistance (RDS(on), VGS=10V) — 6.0 mOhm (typ) / 7.5 mOhm (max)
On-State Resistance (RDS(on), VGS=4.5V) — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg, typ) — 21 nC
Output Charge (Qoss, typ) — [DATA_NEEDED: Qoss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Power Dissipation (PD, TC=25C) — 56 W
Suhu Hubungan Operasi — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC, max) — 2.5 C/W
Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) — 62 C/W
Kemasan / Case — PG-TO252-3 (DPAK)
Lead-Free / Halogen-Free — Yes / Yes
Packing — Tape & Reel (T/R), 2500 per reel
AEC-Q101 / Automotive Grade — Not qualified
Technology / Generation — OptiMOS 30V, trench MOSFET

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