IPD068P03L3GATMA1 vs IPD042P03L3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD068P03L3GATMA1 disebabkan oleh Infineon dan IPD042P03L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD068P03L3GATMA1 | IPD042P03L3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS P-Channel Power MOSFET | — |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (V_DS) | -30 V | — |
| Continuous Drain Current (I_D) at T_C | -70 A | — |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at T_C | 100 W | — |
| R_DS(on) max at V_GS=-10V | 0.005 ohm (typical) | — |
| Gate-Source Threshold Voltage (V_GS(th)) | -1.0 V to -2.2 V | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55°C to +175°C (TJ) |
| Kemasan | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS™ P (Trench) |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| Pulsed Drain Current (IDM) | — | -280 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |