IPD30N10S3L34ATMA2 vs IPD30N08S2L21ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA2 disebabkan oleh Infineon dan IPD30N08S2L21ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD30N10S3L34ATMA2 IPD30N08S2L21ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
Pulsed Drain Current (I_DM) 180 A —
Power Dissipation (P_D, Tc) 57 W —
R_DS(on) max at V_GS=10V 31 mOhm (typ) —
Gate Threshold Voltage V_GS(th) max 2.4 V —
Total Gate Charge (Qg) max 31 nC —
Suhu Hubungan Operasi -55 C to +175 C —
Package / Supplier Device Package PG-TO252-3-11 (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Pin / Tab Count 3 (2 + Tab) —
Technology OptiMOS-T (trench) —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at Tc=25C — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on)) at VGS=10 V — 26 milliohm (typ)
Gate Threshold Voltage (VGS(th)) — Logic-level (L series)
Gate Charge (Qg) typ — 56 nC
Power Dissipation (PD) at Tc=25C — 136 W
Gambaran Suhu Operasi — -55C to +175C
Maximum Junction Temperature — +175C
Kemasan — PG-TO252-3-11 (DPAK-2)
Kiraan Pin — 3 (Drain tab + Gate + Source)

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