IPD33CN10NGATMA1 vs BSC117N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD33CN10NGATMA1 disebabkan oleh Infineon dan BSC117N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD33CN10NGATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 27 A | — |
| Power Dissipation (PD, Tc) | 58 W | — |
| Technology | OptiMOS (Trench) | OptiMOS 5 |
| Kemasan | PG-TO252-3 (DPAK), Surface Mount | PG-TDSON-8-7 (SuperSO8 5x6) |
| Kiraan Pin | 3 (Gate, Drain, Source) | 8 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | -55 C to +150 C (typical MOSFET junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | [DATA_NEEDED: Qg value] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | 1 | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC117N08NS5ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |