IPD60R360P7ATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R360P7ATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R360P7ATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 OptiMOS 3
Technology Superjunction (SJ) N-channel MOSFET Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (V_DS) 600 V —
Gate-Source Voltage (V_GS) ±20 V (max) —
Continuous Drain Current (I_D) at T_C=25°C 9 A —
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current] —
R_DS(on) max @ V_GS=10V 360 mΩ —
Total Power Dissipation (P_tot) at T_C=25°C 41 W —
Suhu Hubungan Operasi -55°C to +150°C -55 C to +175 C
Storage Temperature -55°C to +150°C —
Kemasan / Case PG-TO252-3 (DPAK), surface mount PG-TDSON-8-4 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) typ 3.5 V (typ) —
ESD Protection (HBM) >2 kV (per datasheet) —
Aras MSL 1 (per JEDEC J-STD20) —
RoHS Compliance Compliant —
Qualification Industrial grade per JEDEC (J-STD20, JESD22) —
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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