IPD70N10S312ATMA2 vs IPD30N10S3L34ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA2 disebabkan oleh Infineon dan IPD30N10S3L34ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD30N10S3L34ATMA2 IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N10S3L34ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD70N10S312ATMA2 IPD30N10S3L34ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD70N10S312ATMA2 —
Technology OptiMOS-T Power-MOSFET (N-Channel) OptiMOS-T (trench)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 70 A —
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TO252-3-11 (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited floor life) [DATA_NEEDED: MSL level]
Avalanche Rated Yes —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
Pulsed Drain Current (I_DM) — 180 A
Power Dissipation (P_D, Tc) — 57 W
R_DS(on) max at V_GS=10V — 31 mOhm (typ)
Gate Threshold Voltage V_GS(th) max — 2.4 V
Total Gate Charge (Qg) max — 31 nC
Suhu Hubungan Operasi — -55 C to +175 C
Package / Supplier Device Package — PG-TO252-3-11 (DPAK)
Pin / Tab Count — 3 (2 + Tab)
Automotive Qualification — AEC-Q101

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