IPT015N10N5ATMA1 vs BSC040N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT015N10N5ATMA1 disebabkan oleh Infineon dan BSC040N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT015N10N5ATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 OptiMOS 5
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Kemasan PG-HSOF-8-1 (TOLL) PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single —
Suhu Operasi -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] [DATA_NEEDED: Qg total]
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Status RoHS Compliant Compliant
Packaging Tape & Reel —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Gambaran Suhu Operasi — -55C to +150C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

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