IPT015N10N5ATMA1 vs BSC040N10NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT015N10N5ATMA1 sa pamamagitan ng Infineon at BSC040N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ NakahandaInfineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT015N10N5ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT015N10N5ATMA1 | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| Packhaging | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Temperature na Operasyon | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | [DATA_NEEDED: Qg total] |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Maximum On-Resistance (RDS(on)) | — | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) max | — | 136 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 139 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Output Capacitance Reduction | — | Up to 44% vs previous generation |
| RDS(on) Reduction | — | Up to 43% vs previous generation |
| Automotive Qualification | — | AEC-Q101 (per Infineon OptiMOS 5 family) |