IPT017N12NM6ATMA1 vs IPTG025N15NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT017N12NM6ATMA1 disebabkan oleh Infineon dan IPTG025N15NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT017N12NM6ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS 6 150 V (N-channel trench) |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 150 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Kemasan | PG-HSOF-8 (TOLL) | PG-HSOG-8-1 (TOLG) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +175C | — |
| Kiraan Pin | 8 + tab | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Continuous Drain Current (ID) at TC=25C | — | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| Gambaran Suhu Operasi | — | -55 C to +175 C (typical for OptiMOS 6) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |