IQD020N10NM5CGATMA1 vs IQE050N08NM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD020N10NM5CGATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQD020N10NM5CGATMA1 IQE050N08NM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 5 N-channel trench MOSFET OptiMOS 5 (Source-Down)
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 26 A —
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve] —
Pulsed Drain Current (IDM) at TC=25°C 273 A —
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V) —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 333 W —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TTFN-9-U02 (PQFN 5x6 mm²) PG-TTFN-9-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating from datasheet] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Qualification Industrial grade (Infineon OptiMOS™ 5 family) —
FET Type — N-Channel
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Suhu Operasi — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]

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