IQDH29NE2LM5CGSCATMA1 vs IQEH54NE2LM7UCGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH29NE2LM5CGSCATMA1 disebabkan oleh Infineon dan IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQDH29NE2LM5CGSCATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Kemasan | PG-WHTFN-9-U02 (WHTFN EP) | PG-TTFN-9-3 |
| Kiraan Pin | 9 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| Gambaran Suhu Operasi | — | -55C to +150C (typical MOSFET range) |