IQE012N03LM5CGSCATMA1 vs IQE020N04LM6CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE012N03LM5CGSCATMA1 disebabkan oleh Infineon dan IQE020N04LM6CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE012N03LM5CGSCATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 6, TrenchFET-class |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) @ Ta | 34 A | — |
| Continuous Drain Current (ID) @ Tc | 224 A | — |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | — |
| Kemasan | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Aras MSL | 1 (per JEDEC J-STD-020, floor life unlimited) | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Configuration | — | Single N-Channel, source-down |