IQE013N04LM6ATMA1 vs ISK057N04LM6ATSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE013N04LM6ATMA1 disebabkan oleh Infineon dan ISK057N04LM6ATSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE013N04LM6ATMA1 ISK057N04LM6ATSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS N-channel trench MOSFET OptiMOS 6 Trench
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) 2.3 V (typ)
Kemasan PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-VSON-6-1 (PQFN 2x2 mm)
Gambaran Suhu Operasi -55 °C to +175 °C -55C to +150C
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Gate-Source Voltage (VGS) Max — ±20 V
Continuous Drain Current (ID) at Ta=25C — 15 A
Continuous Drain Current (ID) at Tc=25C — 64 A
Power Dissipation (PD) at Ta — 2.1 W
Power Dissipation (PD) at Tc — 39.1 W
On-Resistance RDS(on) at VGS=10V — [DATA_NEEDED: typical RDS(on) at 10V]
On-Resistance RDS(on) at VGS=4.5V — 8.3 mOhm
Total Gate Charge (Qg) at VGS=10V — 12 nC
Input Capacitance (Ciss) — 870 pF
Output Capacitance (Coss) — 290 pF
Reverse Transfer Capacitance (Crss) — 21 pF

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