IQE022N06LM5CGATMA1 vs IQE036N08NM6CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE022N06LM5CGATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE022N06LM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | — |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | — |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | — |
| Power Dissipation (T_A) | 2.5 W | — |
| Power Dissipation (T_C) | 100 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 C to +175 C (junction, Tj) |
| Kemasan | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 9 (with exposed thermal pad) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Aras MSL | — | MSL1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel, Source-Down |