IQE022N06LM5CGATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE022N06LM5CGATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE022N06LM5CGATMA1
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΞ© | Infineon
IQE022N06LM5CGATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE022N06LM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | β |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | β |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | β |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΞ© | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | β |
| Power Dissipation (T_A) | 2.5 W | β |
| Power Dissipation (T_C) | 100 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +175 C (junction, Tj) |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed thermal pad) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| Configuration | β | Single N-channel, Source-Down |