IQE022N06LM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE022N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQE022N06LM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Kemasan | PG-WHTFN-9 (5x6 mm) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | -55°C to +175°C (TJ) |
| Technology Family | OptiMOS 5 | — |
| Kiraan Pin | 9 (PG-WHTFN-9) | 9 (with exposed pad) |
| Aras MSL | [DATA_NEEDED: MSL Level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Arus Kumpal Tetap (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Pembuangan Kuasa (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Cooling | — | Dual-side cooling capable |
| Polarity | — | N-Channel |
| Configuration | — | Single |