IQE022N06LM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE022N06LM5CGSCATMA1 by Infineon and IQDH88N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE022N06LM5CGSCATMA1

IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon

IQE022N06LM5CGSCATMA1 βœ“ Active
Infineon
IQDH88N06LM5CGSCATMA1

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon

IQDH88N06LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE022N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $2.31
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (TC) 151 A β€”
Continuous Drain Current (TA) 24 A β€”
Maximum Power Dissipation (TC) 100 W β€”
Maximum Power Dissipation (TA) 2.5 W β€”
RDS(on) Maximum at VGS=10V 2.2 mOhm β€”
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) β€”
Package PG-WHTFN-9 (5x6 mm) PG-WHTFN-9-U02 (PQFN 5x6)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55Β°C to +175Β°C (TJ)
Technology Family OptiMOS 5 β€”
Pin Count 9 (PG-WHTFN-9) 9 (with exposed pad)
MSL Level [DATA_NEEDED: MSL Level] 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Technology β€” OptiMOS 5 (trench)
Drain-Source Voltage (V(BR)DSS) β€” 60 V
Continuous Drain Current (Ta=25Β°C) β€” 42 A
Continuous Drain Current (Tc=25Β°C) β€” 447 A
On-Resistance RDS(on) typical @ VGS=10V β€” 0.86 mΞ©
Power Dissipation (Ta=25Β°C) β€” 3 W
Power Dissipation (Tc=25Β°C) β€” 333 W
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical β€” [DATA_NEEDED: Qg typical nC]
Cooling β€” Dual-side cooling capable
Polarity β€” N-Channel
Configuration β€” Single

Datasheets & Resources

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