IQE031N08LM6CGSCATMA1 vs ISC151N08NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE031N08LM6CGSCATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE031N08LM6CGSCATMA1 ISC151N08NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 (40 V to 100 V) —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS max) 80 V —
Continuous Drain Current (ID) at Ta=25C 18 A —
Continuous Drain Current (ID) at Tc 127 A —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 125 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
On-State Resistance RDS(on) max [DATA_NEEDED: RDS(on) at VGS=10 V] —
Gate Drive Level Logic-level —
Kemasan PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) PG-TDSON-8 FL
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C (junction, typical for OptiMOS 6) —
Avalanche Tested 100% avalanche tested —
Aras MSL 1 (per JEDEC J-STD-020, typical for Infineon PQFN) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (TA=25°C) — 9.2 A
Arus Kumpal Tetap (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Bilangan Pin — 8
Channel Mode — Enhancement
Suhu Operasi — -55 °C to +175 °C

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