IQEH50NE2LM7UCGSCATMA1 vs IQE008N03LM5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7UCGSCATMA1 disebabkan oleh Infineon dan IQE008N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IQEH50NE2LM7UCGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 5 |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at TA | 54 A | — |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Kemasan | PG-WHTFN-9-1 (surface mount) | PG-WHSON-8 (Source-Down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | — |
| Technology | Silicon N-Channel Power MOSFET | Trench MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typical) |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Status RoHS | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |