IQEH50NE2LM7ZCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7UCGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7ZCGATMA1 IQEH50NE2LM7UCGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C 175 °C
Gambaran Suhu Operasi -55 degrees C to +175 degrees C —
Kemasan PG-TTFN-9-3 PG-WHTFN-9-1 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) Silicon N-Channel Power MOSFET
Status RoHS Compliant —
Qualification Industrial grade per Infineon datasheet —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at TA — 54 A
Continuous Drain Current (ID) at TC — 422 A
RDS(on) Max — 0.5 mΩ
Gate Threshold Voltage (VGS(th)) typ — 2 V
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 150 W
Series — OptiMOS 7

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