IQFH55N04NM6ATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQFH55N04NM6ATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQFH55N04NM6ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 6 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) @ TA=25°C 53 A —
Pulsed Drain Current @ TC=25°C 451 A —
Static R_DS(on) (typ) 0.55 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 214 W —
Kemasan PG-TSON-12-1 (PQFN 8x6 mm², clip-based) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Suhu Hubungan Operasi -55°C to +175°C —
Technology Trench MOSFET (OptiMOS 6 generation) —
Status RoHS Compliant —
AEC-Q100 [DATA_NEEDED: automotive qualification status] —
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Gambaran Suhu Operasi — -55 °C to +175 °C
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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