IR2104STRPBF vs 2EDL8033G4BXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2104STRPBF disebabkan oleh Infineon dan 2EDL8033G4BXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2104STRPBF 2EDL8033G4BXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $0.59 —
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and low-side referenced output channels —
Bilangan Output 2 (high-side + low-side) —
Offset Voltage (High-Side, Max) 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source Current (typ) 0.21 A —
Output Sink Current (typ) 0.36 A —
Rise Time (typ) 100 ns —
Fall Time (typ) 50 ns —
Propagation Delay (typ) 680 ns —
Turn-On Propagation Delay (typ) 150 ns —
Turn-Off Propagation Delay (typ) 130 ns —
Quiescent Current (VCC/VBS, typ) 150 uA —
Input Logic Compatibility 3.3 V, 5 V, 15 V logic TTL
Shutdown Pin Yes (active-low shutdown input) —
Undervoltage Lockout Yes (VCC and VBS) —
Cross-Conduction Prevention Yes (matched propagation delay) —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Gambaran Suhu Operasi -40 C to +150 C —
Kemasan 8-SOIC (SOIC-8) PG-VDSON-8-5
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Tetstruktur — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Isolation Type — Junction-isolated (non-galvanic)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
Marking Code — 2ED8033G4B

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