IRF3205ZSTRLPBF vs IRFB3207ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF3205ZSTRLPBF disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF3205ZSTRLPBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (IR MOSFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) 55 V 75 V
Continuous Drain Current (ID) at Tc=25C 110 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max @ VGS=10V 6.5 mOhm 4.1 mOhm
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 76 nC —
Power Dissipation (PD) at Tc=25C 170 W —
Suhu Hubungan Operasi -55C to +175C -55 C to +175 C
Kemasan D2PAK (TO-263) TO-220AB (3-lead through-hole)
Jenis Pemasangan Surface Mount Through Hole
Packaging Tape & Reel (left reel) —
Status RoHS Compliant —
Aras MSL 1 N/A (through-hole)
Body Diode Avalanche-rated intrinsic —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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