IRF4905PBF vs IRF9Z34NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905PBF disebabkan oleh Infineon dan IRF9Z34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF4905PBF IRF9Z34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology HEXFET (IR MOSFET) HEXFET (5th generation)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) 120 nC —
Gambaran Suhu Operasi -55 °C to +175 °C (junction) -55C to +175C (junction)
Kemasan TO-220AB (through-hole) TO-220AB (through-hole, 3-pin)
Pin Configuration Gate - Drain - Source (left to right) —
Jenis Pemasangan Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Aras MSL 1 (not moisture-sensitive for TO-220) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)
Status RoHS — Compliant

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