IRF4905STRRPBF vs BSC060P03NS3EGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905STRRPBF disebabkan oleh Infineon dan BSC060P03NS3EGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF4905STRRPBF BSC060P03NS3EGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V -30 V
Continuous Drain Current (ID) at TC=25C -74 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 20 mOhm —
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V —
Total Gate Charge (Qg) 120 nC —
Power Dissipation (PD) at TC=25C 170 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan D2PAK (TO-263-3) PG-TDSON-8-1 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (Advanced Process) OptiMOS™ P-channel Trench
Status RoHS Compliant Compliant
Lead-Free Yes —
Continuous Drain Current (Ta) — 17.7 A
Continuous Drain Current (Tc) — 100 A
On-State Resistance RDS(on) max @ VGS=10V — 6 mΩ
Gate Threshold Voltage VGS(th) typ — -2.5 V
Total Gate Charge Qg @ VGS=10V — 81 nC
Input Capacitance Ciss — 6.02 nF
Output Capacitance Coss — 2.81 nF
Reverse Transfer Capacitance Crss — 220 pF
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 83 W
Gambaran Suhu Operasi — -55°C to +150°C

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