IRF4905STRRPBF vs BSC060P03NS3EGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905STRRPBF sa pamamagitan ng Infineon at BSC060P03NS3EGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF4905STRRPBF | BSC060P03NS3EGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -30 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 20 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (PD) at TC=25C | 170 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | D2PAK (TO-263-3) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | OptiMOS™ P-channel Trench |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Continuous Drain Current (Ta) | — | 17.7 A |
| Continuous Drain Current (Tc) | — | 100 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 6 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | — | 81 nC |
| Input Capacitance Ciss | — | 6.02 nF |
| Output Capacitance Coss | — | 2.81 nF |
| Reverse Transfer Capacitance Crss | — | 220 pF |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 83 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +150°C |