IRF5305STRLPBF vs IRFU5305PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5305STRLPBF disebabkan oleh Infineon dan IRFU5305PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF5305STRLPBF | IRFU5305PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -31 A | — |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | — |
| RDS(on) max at VGS=-10V | 60 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | 42 nC (typical) |
| Maximum Power Dissition at Tc | 110 W | — |
| Maximum Power Dissipation at TA | 3.8 W | — |
| Kemasan | TO-263 / D2PAK (surface mount) | IPAK (TO-251AA) Through-Hole, 3 pins |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj max / operating range] | — |
| Technology | HEXFET (fifth generation), IR MOSFET | — |
| Packaging | Tape & Reel (TR), 800 pcs per reel | — |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at Tc | — | -31 A |
| Pulsed Drain Current (IDM) | — | -110 A (pulsed) |
| On-Resistance RDS(on) max @ VGS=-10V | — | 65 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 110 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.36 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 62 °C/W |
| Avalanche Rated | — | Yes (EAS rated) |
| RoHS Compliance | — | Compliant |