IRF7313TRPBF vs IRF7343TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7313TRPBF disebabkan oleh Infineon dan IRF7343TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7313TRPBF IRF7343TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET (HEXFET Generation V)
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V 50 mOhm
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
Gambaran Suhu Operasi -55C to +150C (junction) —
Kemasan 8-pin SOIC (SO-8) surface mount 8-SOIC (SO-8)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
Aras MSL 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Part Status — Active
Jenis Transistor — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
Power Dissipation (PD) — 2 W
Lead-Free — Yes
RoHS Compliance — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga