IRF7319TRPBF vs IRFR1205TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7319TRPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7319TRPBF IRFR1205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET HEXFET (IR MOSFET, 5th generation)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 2 V min, 4 V max
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) —
Configuration N-Channel + P-Channel (complementary half-bridge) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 44 A
Pulsed Drain Current (IDM) — 160 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
Suhu Hubungan Operasi — -55C to +175C
Kemasan — TO-252AA (DPAK)
Status RoHS — Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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