IRF7380TRPBF vs IRF7469TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7380TRPBF disebabkan oleh Infineon dan IRF7469TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7380TRPBF IRF7469TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7380TRPBF —
Configuration Dual N-Channel MOSFET Array (2 independent FETs in one package) —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 3.6 A —
On-Resistance RDS(on) max 73 mOhm at VGS = 10 V —
Technology IR MOSFET™ (Infineon HEXFET-style planar N-ch) IR MOSFET™ (HEXFET)
Total Power Dissipation (PD) 2 W —
Kemasan SO-8 (8-SO, SOIC-8) 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +150 C —
Gate Drive Voltage (typical) 10 V (full RDS(on)); logic-level not guaranteed —
Lead-Free / RoHS Yes (Pb-free plating, suffix PBF) —
Packaging Tape & Reel (suffix TR) —
Primary Application High-frequency DC-DC converters —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Gambaran Suhu Operasi — -55°C to +150°C (Tj)
Aras MSL — 1 (unlimited)
Status RoHS — Compliant
Lead-Free — Yes
Boson Bebas — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga