IRF7389TRPBF vs IRF7319TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7389TRPBF disebabkan oleh Infineon dan IRF7319TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7389TRPBF IRF7319TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N and P Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (N-Ch, Id) 7.3 A —
Continuous Drain Current (P-Ch, Id) -5.3 A —
On-Resistance RDS(on) Max 29 mOhm —
Power Dissipation (Pd) 2.5 W —
Configuration Dual N+P Complementary Half-Bridge N-Channel + P-Channel (complementary half-bridge)
Technology HEXFET Generation V (IR MOSFET) IR MOSFET / Fifth Generation HEXFET
Kemasan 8-SO (SOIC-8) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C —
Avalanche Rated Yes —
Lead Free / RoHS Lead Free / RoHS Compliant —
Aras MSL 1 —
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Gambaran Suhu Operasi — -55C to +150C (junction)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Packaging — Tape & Reel (TR suffix)

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