IRF7389TRPBF vs IRF7319TRPBF Comparison

Detailed side-by-side comparison of IRF7389TRPBF by Infineon and IRF7319TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7389TRPBF IRF7319TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.62
Transistor Polarity N and P Channel β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (N-Ch, Id) 7.3 A β€”
Continuous Drain Current (P-Ch, Id) -5.3 A β€”
On-Resistance RDS(on) Max 29 mOhm β€”
Power Dissipation (Pd) 2.5 W β€”
Configuration Dual N+P Complementary Half-Bridge N-Channel + P-Channel (complementary half-bridge)
Technology HEXFET Generation V (IR MOSFET) IR MOSFET / Fifth Generation HEXFET
Package 8-SO (SOIC-8) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Avalanche Rated Yes β€”
Lead Free / RoHS Lead Free / RoHS Compliant β€”
MSL Level 1 β€”
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Product Type β€” Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current N-channel (ID) β€” 6.5 A
Continuous Drain Current P-channel (ID) β€” 4.9 A
RDS(on) Max N-channel β€” 29 mOhm (per Infineon product page)
RDS(on) Max P-channel β€” [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) β€” 2 W
Thermal Resistance Junction-to-Ambient N-ch β€” 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch β€” 110 C/W (steady state)
Package Type β€” 8-SOIC (SO-8)
Operating Temperature Range β€” -55C to +150C (junction)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Lead-Free / RoHS β€” Yes (PBF suffix = Pb-free)
Packaging β€” Tape & Reel (TR suffix)

Datasheets & Resources

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