IRF8736PBF vs IRF8736TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF8736PBF disebabkan oleh Infineon dan IRF8736TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF8736PBF IRF8736TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TA=70°C [DATA_NEEDED: ID at TA=70°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) at VGS=10V 4.8 mΩ —
On-Resistance RDS(on) at VGS=4.5V 6.0 mΩ (typical) —
Gate-Source Threshold Voltage VGS(th) Logic-level (optimized for 5 V drive) —
Total Gate Charge Qg 17 nC (typical) —
Maximum Power Dissipation at TA=25°C 2.5 W —
Gambaran Suhu Operasi -55°C to +150°C (junction) -55C to +150C (junction)
Kemasan SO-8 (8-SO) SO-8 (8-SO, MS-012AA)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (Unlimited) 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Lead-Free, RoHS3 Compliant —
Qualification Standard JEDEC —
Avalanche Rated Yes (fully characterized avalanche voltage and current) Yes (fully characterized avalanche voltage)
FET Type — N-Channel
Technology — StrongIRFET / HEXFET
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

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