IRF8736PBF vs IRF8736TRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF8736PBF tarafından Infineon ve IRF8736TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF8736PBF IRF8736TRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TA=70°C [DATA_NEEDED: ID at TA=70°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) at VGS=10V 4.8 mΩ —
On-Resistance RDS(on) at VGS=4.5V 6.0 mΩ (typical) —
Gate-Source Threshold Voltage VGS(th) Logic-level (optimized for 5 V drive) —
Total Gate Charge Qg 17 nC (typical) —
Maximum Power Dissipation at TA=25°C 2.5 W —
İşletim Sıcaklığı Aralığı -55°C to +150°C (junction) -55C to +150C (junction)
Paket SO-8 (8-SO) SO-8 (8-SO, MS-012AA)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi 1 (Unlimited) 1 (per JEDEC J-STD-020)
RoHS / Lead-Free Lead-Free, RoHS3 Compliant —
Qualification Standard JEDEC —
Avalanche Rated Yes (fully characterized avalanche voltage and current) Yes (fully characterized avalanche voltage)
FET Type — N-Channel
Technology — StrongIRFET / HEXFET
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

Dökümanlar & Kaynaklar

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