IRFB3207ZPBF vs IRF3205STRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3207ZPBF disebabkan oleh Infineon dan IRF3205STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3207ZPBF IRF3205STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) HEXFET (advanced process)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-220AB (3-lead through-hole) TO-263-3 (D2PAK)
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Aras MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) @ Tc=25°C — 110 A
Pulsed Drain Current (Idm) — 390 A
Static Drain-Source On-Resistance (Rds(on)) — 8 mΩ max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 97.3 nC typical
Power Dissipation (Pd) @ Tc=25°C — 200 W
Gambaran Suhu Operasi — -55 °C to +175 °C (Tj)
Lead-Free / RoHS Status — Lead-Free / RoHS Compliant (PBF suffix)
Packaging — Tape & Reel (STRL)

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