IRFB3207ZPBF vs IRF3205STRLPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB3207ZPBF tarafından Infineon ve IRF3205STRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB3207ZPBF IRF3205STRLPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) HEXFET (advanced process)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
İşletim Jant Sıcaklığı -55 C to +175 C —
Paket TO-220AB (3-lead through-hole) TO-263-3 (D2PAK)
Montaj Türü Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL Seviyesi N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) @ Tc=25°C — 110 A
Pulsed Drain Current (Idm) — 390 A
Static Drain-Source On-Resistance (Rds(on)) — 8 mΩ max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 97.3 nC typical
Power Dissipation (Pd) @ Tc=25°C — 200 W
İşletim Sıcaklığı Aralığı — -55 °C to +175 °C (Tj)
Lead-Free / RoHS Status — Lead-Free / RoHS Compliant (PBF suffix)
Packaging — Tape & Reel (STRL)

Dökümanlar & Kaynaklar

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