IRFZ48NSTRLPBF vs IRF3710STRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ48NSTRLPBF disebabkan oleh Infineon dan IRF3710STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ48NSTRLPBF IRF3710STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Power MOSFET N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC 86.7 nC
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) Surface Mount D2PAK (TO-263), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
Status RoHS Compliant Compliant (Pb-free)
Technology Family HEXFET advanced process technology —
Technology — HEXFET / IR MOSFET (planar)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc=25 C) — 57 A
On-Resistance RDS(on) max — 23 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc=25 C) — 200 W
Gambaran Suhu Operasi — -55 C to +175 C
Lead-Free — Yes
Tape & Reel Orientation — TRL (left)

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